Specification	IRFD320

Current - Continuous Drain (Id) (Ta)	490 mA
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	410 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-HVMDIP, 4-DIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	1.8 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD320 Series

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Package Width	Package Name	Package Length	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	Mounting Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	FET Type
Vishay Dale IRFD320PBF	1 W	490 mA	410 pF	7.62 mm	4-DIP 4-HVMDIP	0.3 in	10 V	400 V	20 V	20 nC	1.8 Ohm	4 V	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel
Vishay Dale IRFD320	1 W	490 mA	410 pF	7.62 mm	4-DIP 4-HVMDIP	0.3 in	10 V	400 V	20 V	20 nC	1.8 Ohm	4 V	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel

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