Specification	BSC022N04LS6ATMA1

Current - Continuous Drain (Id) (Ta)	27 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	28 nC
Input Capacitance (Ciss) (Max)	1900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PG-TDSON-8-1
Power Dissipation (Max)	79 W, 3 W
Rds On (Max)	2.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

BSC022 Series

Part	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	FET Type	Package Name	Rds On (Max)	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Max)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)
INFINEON BSC022N04LS6ATMA1	1900 pF	10 V	4.5 V	8-PowerTDFN	N-Channel	PG-TDSON-8-1	2.2 mOhm	20 V	3 W 79 W	28 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 °C	40 V	27 A	2.3 V

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