Specification	IRFSL11N50A

Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	51 nC
Input Capacitance (Ciss) (Max)	1426 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	TO-262-3
Power Dissipation (Max)	190 W
Rds On (Max)	550 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

IRFSL11 Series

Part	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Package Name
Vishay Dale IRFSL11N50A	4 V	-55 °C	175 °C	MOSFET (Metal Oxide)	51 nC	550 mOhm	11 A	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	N-Channel	10 V	30 V	190 W	1426 pF	500 V	TO-262-3

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