Specification	SI4840BDY-T1-GE3

Current - Continuous Drain (Id) (Tc)	19 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	50 nC
Input Capacitance (Ciss) (Max)	2000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W, 6 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI4840 Series

Part	Input Capacitance (Ciss) (Max)	FET Type	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Rds On (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Package Length	Package Width	Vgs(th) (Max)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI4840BDY-T1-GE3	2000 pF	N-Channel	Surface Mount	2.5 W 6 W	19 A	8-SOIC	9 mOhm	MOSFET (Metal Oxide)	40 V	20 V	0.154 in	3.9 mm	3 V	50 nC	10 V	4.5 V	-55 °C	150 °C
Vishay Dale SI4840DY-T1-GE3		N-Channel	Surface Mount	1.56 W		8-SOIC	9 mOhm	MOSFET (Metal Oxide)	40 V	20 V	0.154 in	3.9 mm	3 V	28 nC	10 V	4.5 V	-55 °C	150 °C	10 A

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