Specification	SIDC24D30SIC3

Capacitance	600 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Die
Package Name	Sawn on foil
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	300 V
Voltage - Forward (Vf) (Max)	1.7 V

SIDC24D Series

Part	Capacitance	Current - Reverse Leakage	Technology	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Package Name	Reverse Recovery Time (trr)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Package / Case
INFINEON SIDC24D30SIC3	600 pF	200 µA	SiC (Silicon Carbide) Schottky	Surface Mount	175 °C	-55 °C	300 V	1.7 V	10 A	Sawn on foil	0 ns	500 mA	No Recovery Time	500 mA 500 mA	Die

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