IR2106SPBF

NRND

Infineon Technologies

DUAL DRIVER IC, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 350MA OUT, 200NS DELAY, SOIC-8

Deep-Dive with AI

Search across all available documentation for this part.

IR2106SPBF

NRND

Infineon Technologies

DUAL DRIVER IC, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 350MA OUT, 200NS DELAY, SOIC-8

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2106SPBF

Channel Type	Independent
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.9 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2106 Series

Part	Input Type	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Gate Type	Supplier Device Package	Mounting Type	Number of Drivers	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Driven Configuration
Infineon Technologies IR2106SPBF	Non-Inverting	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	8-SOIC	Surface Mount	2	0.8 V 2.9 V	600 V	150 ns	50 ns	150 °C	-40 °C	8-SOIC	3.9 mm	0.154 in	Half-Bridge
Infineon Technologies IR2106S	Non-Inverting	Independent	20 V	10 VDC	IGBT MOSFET N-Channel MOSFET	8-SOIC	Surface Mount	2	0.8 V 2.9 V	600 V	150 ns	50 ns	150 °C	-40 °C	8-SOIC	3.9 mm	0.154 in	Half-Bridge
Infineon Technologies IR2106STRPBF	Non-Inverting	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	8-SOIC	Surface Mount	2	0.8 V 2.9 V	600 V	150 ns	50 ns	150 °C	-40 °C	8-SOIC	3.9 mm	0.154 in	Half-Bridge
Infineon Technologies IR2106STR	Non-Inverting	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	8-SOIC	Surface Mount	2	0.8 V 2.9 V	600 V	150 ns	50 ns	150 °C	-40 °C	8-SOIC	3.9 mm	0.154 in	Half-Bridge

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.11
Digikey	Tube	1	$ 2.50
		10	$ 1.64
		25	$ 1.41
		100	$ 1.16
		250	$ 1.09
Newark	Each	1	$ 1.85
		10	$ 1.36
		100	$ 1.24
		500	$ 1.18
		1000	$ 1.14
		2500	$ 1.13
		7600	$ 1.13

Description

General part information

IR2106 Series

EiceDRIVER™ 600 Vhigh and low-sidegate driver ICwith typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the newest version with ourSOI technologywe recommend2ED2106S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Documents

Technical documentation and resources

No documents available