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STMICROELECTRONICS LD1117S50CTR

BSP171PH6327XTSA1

Active
INFINEON

POWER MOSFET, P CHANNEL, 60 V, 1.9 A, 0.21 OHM, SOT-223, SURFACE MOUNT

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STMICROELECTRONICS LD1117S50CTR

BSP171PH6327XTSA1

Active
INFINEON

POWER MOSFET, P CHANNEL, 60 V, 1.9 A, 0.21 OHM, SOT-223, SURFACE MOUNT

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Description

General part information

BSP171 Series

Infineon technologies offers automotive and industrial manufacturers a broad portfolio ofN and P-Channel Small Signal MOSFETsthat meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety ofapplicationsincludingLED lighting,ADAS,body control units,SMPSandmotor control.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSP171PH6327XTSA1
Current - Continuous Drain (Id) (Ta)1.9 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)20 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)460 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NamePG-SOT223-4
Power Dissipation (Max)1.8 W
QualificationAEC-Q101
Rds On (Max)300 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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