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Description

General part information

STF18 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF18NM60ND
Current - Continuous Drain (Id) (Tc)13 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)34 nC
Input Capacitance (Ciss) (Max)1030 pF, 1030 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FP
Power Dissipation (Max)30 W
Rds On (Max)290 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)5 V

Pricing

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CAD

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Documents

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