STF18NM60ND

Obsolete

STMicroelectronics

MOSFET N-CH 600V 13A TO220FP

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STF18NM60ND

Obsolete

STMicroelectronics

MOSFET N-CH 600V 13A TO220FP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF18NM60ND

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1030 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STF18N65M2 Series

N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]
STMicroelectronics STF18N65M5	150 °C	10 V	220 mOhm	Through Hole	N-Channel	650 V	15 A	25 V	5 V	MOSFET (Metal Oxide)	1240 pF	31 nC	25 W	TO-220-3 Full Pack	TO-220FP
STMicroelectronics STF18NM60ND	150 °C	10 V		Through Hole	N-Channel	600 V	13 A	25 V	5 V	MOSFET (Metal Oxide)	1030 pF	34 nC		TO-220-3 Full Pack	TO-220FP
STMicroelectronics STF18N65M2		10 V	330 mOhm	Through Hole	N-Channel	650 V	12 A	25 V	4 V	MOSFET (Metal Oxide)	770 pF		25 W	TO-220-3 Full Pack	TO-220FP	-55 °C	150 °C	20 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STF18N65M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources