Specification	SIR622DP-T1-RE3

Current - Continuous Drain (Id) (Ta)	12.6 A
Current - Continuous Drain (Id) (Tc)	51.6 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	41 nC
Input Capacitance (Ciss) (Max)	1516 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	17.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

SIR622 Series

Part	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Technology
Vishay Dale SIR622DP-T1-RE3	PowerPAK® SO-8	-55 °C	150 °C	N-Channel	6.25 W 104 W	1516 pF	20 V	PowerPAK® SO-8	10 V	7.5 V	41 nC	Surface Mount	17.7 mOhm	4.5 V	51.6 A	12.6 A	150 V	MOSFET (Metal Oxide)

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