Specification	IX4R11S3

Channel Type	Independent
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	4 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	22 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	650 V
Input Type	Non-Inverting
Logic Voltage - VIH	7 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.295 in
Package Name	16-SOIC
Package Width	7.5 mm
Rise Time (Typ)	23 ns
Voltage - Supply (Maximum)	35 V
Voltage - Supply (Minimum)	10 VDC

IX4R11 Series

Part	Gate Type	Input Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Channel Type	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Logic Voltage - VIH	Logic Voltage - VIL	Fall Time (Typ)	Rise Time (Typ)	High Side Voltage - Max (Bootstrap)	Gate Channel	Number of Drivers	Driven Configuration	Package Name	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Length	Package Width
LITTELFUSE IX4R11S3T/R	IGBT MOSFET N-Channel MOSFET	Non-Inverting	4 A	4 A	Independent	Surface Mount	-40 °C	150 °C	7 V	6 V	22 ns	23 ns	650 V	N-Channel	2	Half-Bridge	16-SOIC	10 VDC	35 V	0.295 in	7.5 mm
LITTELFUSE IX4R11S3	IGBT MOSFET N-Channel MOSFET	Non-Inverting	4 A	4 A	Independent	Surface Mount	-40 °C	150 °C	7 V	6 V	22 ns	23 ns	650 V	N-Channel	2	Half-Bridge	16-SOIC	10 VDC	35 V	0.295 in	7.5 mm

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