Specification	SSM6J801R,LF

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	12.8 nC
Input Capacitance (Ciss) (Max)	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power Dissipation (Max)	1.5 W
Rds On (Max)	32.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	6 V
Vgs(th) (Max)	1 V

SSM6J801R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0325 Ω@4.5V, TSOP6F

Part	Operating Temperature	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Rds On (Max)	Package Name	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs (Max) Positive	Vgs (Max) Negative
Toshiba Semiconductor and Storage SSM6J801R,LF	150 °C	Surface Mount	4.5 V	1.5 V	MOSFET (Metal Oxide)	32.5 mOhm	6-TSOP-F	1 V	20 V	1.5 W	840 pF	12.8 nC	P-Channel	6 A	6-SMD Flat Leads	6 V	-8 V

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