BSM75GB170DN2HOSA1

Obsolete

Infineon Technologies

TRANS IGBT MODULE N-CH 1700V 110A 625W 7-PIN TRAY

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Obsolete

Infineon Technologies

TRANS IGBT MODULE N-CH 1700V 110A 625W 7-PIN TRAY

Technical Specifications

Parameters and characteristics for this part

Specification	BSM75GB170DN2HOSA1

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	110 A
Input	Standard
Input Capacitance (Cies) @ Vce	11 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	Module
Power - Max [Max]	625 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	3.9 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Current - Collector (Ic) (Max) [Max]	Input	Mounting Type	Operating Temperature	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	NTC Thermistor	Power - Max [Max]	Configuration	Package / Case	Supplier Device Package
Infineon Technologies BSM75GB170DN2HOSA1	110 A	Standard	Chassis Mount	150 °C	11 nF	1700 V	3.9 V		625 W	Half Bridge	Module	Module

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1700 V 110 A 625 W Chassis Mount Module

Technical documentation and resources