IXFP8N65X2M

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IXYS

MOSFET N-CH 650V 8A TO220

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IXYS

MOSFET N-CH 650V 8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP8N65X2M

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-220 Isolated Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C
IXYS IXFP8N65X2M	-55 °C	150 °C	11 nC	790 pF	650 V	TO-220 Isolated Tab	5 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab	Through Hole	450 mOhm	30 V	10 V	150 W	N-Channel	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 8A (Tc) 150W (Tc) Through Hole TO-220 Isolated Tab

Technical documentation and resources

No documents available