IXFC96N15P

Obsolete

IXYS

MOSFET N-CH 150V 42A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 150V 42A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC96N15P

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max)	120 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Supplier Device Package	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXFC96N15P	ISOPLUS220™	120 W	MOSFET (Metal Oxide)	3500 pF	Through Hole	ISOPLUS220™	N-Channel	110 nC	5 V	20 V	10 V	150 V	42 A	26 mOhm	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 42A (Tc) 120W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available