Specification	TK13A50DA(STA4,Q,M

Current - Continuous Drain (Id) (Ta)	12.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	28 nC
Input Capacitance (Ciss) (Max)	1550 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220SIS
Power Dissipation (Max)	45 W
Rds On (Max)	470 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

TK13A50DA Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 500 V, 0.47 Ω@10V, TO-220SIS, π-MOSⅦ

Part	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Technology	Gate Charge (Max)	Operating Temperature	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Toshiba Semiconductor and Storage TK13A50DA(STA4,Q,M	Through Hole	470 mOhm	4 V	45 W	MOSFET (Metal Oxide)	28 nC	150 °C	30 V	TO-220-3 Full Pack	12.5 A	1550 pF	TO-220SIS	500 V	10 V	N-Channel

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