Specification	SI8809EDB-T2-E1

Current - Continuous Drain (Id) (Ta)	1.94
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	15 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	500 mW
Rds On (Max)	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	900 mV

SI8809 Series

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Rds On (Max)	Package / Case	Power Dissipation (Max)	Mounting Type	FET Type	Technology	Vgs (Max)
Vishay Dale SI8809EDB-T2-E1	20 V	4.5 V	1.8 V	900 mV	15 nC	1.94	-55 °C	150 °C	4-Microfoot	90 mOhm	4-XFBGA	500 mW	Surface Mount	P-Channel	MOSFET (Metal Oxide)	8 V

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