Specification	MPQ1922GVE-AEC1-Z

Channel Type	Independent
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	3 A
Driven Configuration	Half-Bridge
Gate Channel	N-Channel
Gate Type	MOSFET
High Side Voltage - Max (Bootstrap)	115 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.2 V
Logic Voltage - VIL	0.8 V
Mounting Type	Wettable Flank, Surface Mount
Number of Drivers	2
Operating Temperature (Max)	165 °C
Operating Temperature (Min)	-40 °C
Package / Case	22-VFQFN Exposed Pad
Package Length	4 mm
Package Name	22-QFN
Package Width	5 mm
Voltage - Supply (Maximum)	100 V
Voltage - Supply (Minimum)	0 V

MPQ1922 Series

Part	Package Name	Package Width	Package Length	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	High Side Voltage - Max (Bootstrap)	Driven Configuration	Gate Channel	Gate Type	Package / Case	Mounting Type	Channel Type	Logic Voltage - VIL	Logic Voltage - VIH	Number of Drivers	Current - Peak Output (Source)	Current - Peak Output (Sink)	Input Type
Monolithic Power Systems Inc. MPQ1922GVE-AEC1-Z	22-QFN	5 mm	4 mm	-40 °C	165 °C	100 V	0 V	115 V	Half-Bridge	N-Channel	MOSFET	22-VFQFN Exposed Pad	Surface Mount Wettable Flank	Independent	0.8 V	2.2 V	2	3 A	4 A	Non-Inverting
Monolithic Power Systems Inc. MPQ1922GVE-AEC1-P	22-QFN	5 mm	4 mm	-40 °C	165 °C	100 V	0 V	115 V	Half-Bridge	N-Channel	MOSFET	22-VFQFN Exposed Pad	Surface Mount Wettable Flank	Independent	0.8 V	2.2 V	2	3 A	4 A	Non-Inverting

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