
CUS521,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-323(USC)

CUS521,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-323(USC)
Description
General part information
CUS521 Series
Diodes, 30 V/0.2 A Schottky Barrier Diode, SOD-323(USC)
Technical Specifications
Parameters and characteristics for this part
| Specification | CUS521,H3F |
|---|---|
| Capacitance | 26 pF |
| Current - Average Rectified (Io) | 200 mA |
| Current - Reverse Leakage | 30 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125 °C |
| Package / Case | SC-76, SOD-323 |
| Package Name | USC |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) | 500 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
CUS521,H3F | Datasheet
Basics of Diodes (Types and Overview of Diodes)
Mini catalog Toshiba's circuit protection solutions and switch solutions
Selection Guide Small Signal 2025 Rev1.0
Mini catalog Introduction of Toshiba diode lineup for Industries
Basics of Diodes (Power Losses and Thermal Design)
CUS521 Data sheet/Japanese
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
Thermal Design for Schottky Barrier Diodes (SBDs) in the US2H Package
Selecting a Schottky Barrier Diode for Voltage Boost Circuits