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CUS521,H3F

CUS521,H3F

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Toshiba Semiconductor and Storage

DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-323(USC)

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CUS521,H3F

CUS521,H3F

Active
Toshiba Semiconductor and Storage

DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-323(USC)

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Description

General part information

CUS521 Series

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOD-323(USC)

Technical Specifications

Parameters and characteristics for this part

SpecificationCUS521,H3F
Capacitance26 pF
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage30 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)125 °C
Package / CaseSC-76, SOD-323
Package NameUSC
SpeedAny Speed, Small Signal
Speed - Fast Recovery (Maximum)200 mA
Speed - Small Signal Current Max200 mA, 200 mA, 200 mA
TechnologySchottky
Voltage - DC Reverse (Vr) (Max)30 V
Voltage - Forward (Vf) (Max)500 mV

Pricing

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CAD

3D models and CAD resources for this part