Specification	IRF7905PBF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	8.9 A
Current - Continuous Drain (Id) (Typical)	7.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	6.9 nC
Input Capacitance (Ciss) (Max)	600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	21.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.25 V

IRF7905 Series

Part	FET Feature	Technology	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Mounting Type	Gate Charge (Max)	Package Name	Power - Max	Package Length	Package Width
INFINEON IRF7905TRPBF	Logic Level Gate	MOSFET (Metal Oxide)	600 pF	2	N-Channel	Dual	-55 °C	150 °C	30 V	2.25 V	21.8 mOhm	8.9 A	7.8 A	Surface Mount	6.9 nC	8-SO 8-SOIC	2 VA	0.154 in	3.9 mm
INFINEON IRF7905TRPBF	Logic Level Gate	MOSFET (Metal Oxide)	600 pF	2	N-Channel	Dual	-55 °C	150 °C	30 V	2.25 V	21.8 mOhm	8.9 A	7.8 A	Surface Mount	6.9 nC	8-SO 8-SOIC	2 VA	0.154 in	3.9 mm
INFINEON IRF7905PBF	Logic Level Gate	MOSFET (Metal Oxide)	600 pF	2	N-Channel	Dual	-55 °C	150 °C	30 V	2.25 V	21.8 mOhm	8.9 A	7.8 A	Surface Mount	6.9 nC	8-SO 8-SOIC	2 VA	0.154 in	3.9 mm

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