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Description

General part information

MJE13002 Series

Bipolar (BJT) Transistor NPN 400 V 800 mA 5MHz 900 mW Through Hole TO-92

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE13002B-AP
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)9
Frequency - Transition5 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package NameTO-92
Power - Max900 mW
Transistor TypeNPN
Vce Saturation (Max)500 mV
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

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