TPN11006PL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0114 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
TPN11006PL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0114 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
Description
General part information
TPN11006PL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN11006PL,LQ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 26 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17 nC |
| Input Capacitance (Ciss) (Max) | 1625 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.1 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.1 mm |
| Power Dissipation (Max) | 610 mW, 61 W |
| Rds On (Max) | 11.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Simplified CFD Model Application Note
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Avalanche energy calculation
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET Secondary Breakdown
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
TPN11006PL Data sheet/English
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
MOSFET SPICE model grade
Motor Control (Vacuum Cleaners)
Hints and Tips for Thermal Design part3
Selection Guide MOSFETs 2025 Rev1.0
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
MOSFET Self-Turn-On Phenomenon
Calculating the Temperature of Discrete Semiconductor Devices
Resonant Circuits and Soft Switching
TPN11006PL Data sheet/Japanese
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2