Specification	C2M0045170D

Current - Continuous Drain (Id) (Tc)	72 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	188 nC
Input Capacitance (Ciss) (Max)	3672 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	520 W
Rds On (Max)	70 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

C2M0045170 Series

Part	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Package Name	Package / Case	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Vgs (Max) Negative	Vgs (Max) Positive	Rds On (Max)	Mounting Type
Wolfspeed, Inc. C2M0045170D	72 A	520 W	TO-247-3	TO-247-3	SiCFET (Silicon Carbide)	-40 °C	150 °C	3672 pF	N-Channel	20 V	4 V	188 nC	1700 V	-10 V	25 V	70 mOhm	Through Hole
Wolfspeed, Inc. C2M0045170P	72 A	520 W	TO-247-4L	TO-247-4	SiCFET (Silicon Carbide)	-40 °C	150 °C	3672 pF	N-Channel	20 V	4 V	188 nC	1700 V	-10 V	25 V	59 mOhm	Through Hole

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