DMN2012UCA6-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2012UCA6-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2012UCA6-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Drain |
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-SMD, No Lead |
| Power - Max [Max] | 820 mW |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | X3-DSN2718-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.50 | |
| 6000 | $ 0.48 | |||
Description
General part information
DMN2012UCA6 Series
This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources