TSM080N03PQ56 RLG

Active

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 73A 8PDFN

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 73A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM080N03PQ56 RLG

Current - Continuous Drain (Id) @ 25°C	73 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14.4 nC
Input Capacitance (Ciss) (Max) @ Vds	843 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Technology	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Taiwan Semiconductor Corporation TSM080N03PQ56 RLG	14.4 nC	2.5 V	8 mOhm	73 A	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)	20 V	8-PDFN (5x6)	30 V	N-Channel	-55 °C	150 °C	843 pF	4.5 V 10 V
Taiwan Semiconductor Corporation TSM080N03EPQ56 RLG	7.5 nC	2.5 V	8 mOhm	55 A	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)	20 V	8-PDFN (5x6)	30 V	N-Channel	-55 °C	150 °C	750 pF	4.5 V 10 V	54 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 73A (Tc) 69W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources