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SCT20N120H - H2PAK

SCT20N120H

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 20 A, 189 MOHM (TYP., TJ = 150 C) IN AN H2PAK-2 PACKAGE

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DocumentsDatasheet+25
SCT20N120H - H2PAK

SCT20N120H

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 20 A, 189 MOHM (TYP., TJ = 150 C) IN AN H2PAK-2 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT20N120H
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC
Input Capacitance (Ciss) (Max) @ Vds650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]175 W
Rds On (Max) @ Id, Vgs290 mOhm
Supplier Device PackageH2Pak-2
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 15.66
10$ 14.39
25$ 13.79
100$ 12.15
250$ 11.55
500$ 10.81
Digi-Reel® 1$ 15.66
10$ 14.39
25$ 13.79
100$ 12.15
250$ 11.55
500$ 10.81
Tape & Reel (TR) 1000$ 9.91

Description

General part information

SCT20N120H Series

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.