IRF6216PBF

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Infineon Technologies

MOSFET P-CH 150V 2.2A 8SO

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Unknown

Infineon Technologies

MOSFET P-CH 150V 2.2A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6216PBF

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Infineon Technologies IRF6216PBF	P-Channel	MOSFET (Metal Oxide)	10 V	20 V	Surface Mount	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	2.2 A	240 mOhm	1280 pF	2.5 W	8-SO	150 V	10 V 49 nC	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$