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STB60NF06T4 - D²PAK

STB60NF06T4

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STMicroelectronics

POWER MOSFET, N CHANNEL, 60 V, 60 A, 0.016 OHM, TO-263 (D2PAK), SURFACE MOUNT

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DocumentsDatasheet+15
STB60NF06T4 - D²PAK

STB60NF06T4

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 60 V, 60 A, 0.016 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB60NF06T4
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs66 nC
Input Capacitance (Ciss) (Max) @ Vds1810 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-65 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs16 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.08
10$ 0.93
100$ 0.92
Digi-Reel® 1$ 1.08
10$ 0.93
100$ 0.92
Tape & Reel (TR) 1000$ 0.79
2000$ 0.78
3000$ 0.76
5000$ 0.75
NewarkEach (Supplied on Full Reel) 1$ 0.70

Description

General part information

STB60NF06 Series

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.