BSD840N L6327

Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 0.88A SOT363

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Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 0.88A SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BSD840N L6327

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	880 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.26 nC
Input Capacitance (Ciss) (Max) @ Vds	78 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	PG-SOT363-PO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	750 mV

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Feature
Infineon Technologies BSD840N L6327	400 mOhm	Surface Mount	880 mA	PG-SOT363-PO	500 mW	2 N-Channel (Dual)	78 pF	6-VSSOP SC-88 SOT-363	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	0.26 nC	750 mV	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 880mA 500mW Surface Mount PG-SOT363-PO

Technical documentation and resources