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L6388ED013TR

L6388ED013TR

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STMicroelectronics

MOSFET DRIVER, HALF BRIDGE, 9.1V TO 17V SUPPLY, 650MA OUT, 160NS DELAY, SOIC-8

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L6388ED013TR

L6388ED013TR

Active
STMicroelectronics

MOSFET DRIVER, HALF BRIDGE, 9.1V TO 17V SUPPLY, 650MA OUT, 160NS DELAY, SOIC-8

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Description

General part information

L6388E Series

The L6388E is a high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the deadtime function.

The L6388E device has two input and two output pins, and guarantees the outputs switch in phase with inputs. The logic inputs are CMOS/TTL compatible (3.3 V, 5 V and 15 V) to ease the interfacing with controlling devices.

The bootstrap diode is integrated in the driver allowing a more compact and reliable solution.

Technical Specifications

Parameters and characteristics for this part

SpecificationL6388ED013TR
Channel TypeIndependent
Current - Peak Output (Sink)650 mA
Current - Peak Output (Source)400 mA
Driven ConfigurationHalf-Bridge
Fall Time (Typ)40 ns
Gate ChannelN-Channel
Gate TypeIGBT, MOSFET
High Side Voltage - Max (Bootstrap)600 V
Input TypeNon-Inverting
Logic Voltage - VIH1.8 V
Logic Voltage - VIL1.1 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Rise Time (Typ)70 ns
Voltage - Supply17 V

Pricing

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CAD

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