DMN3013LDG-7

Active

Diodes Inc

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3013LDG-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	15 A, 9.5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	5.7 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power - Max [Max]	2.16 W
Rds On (Max) @ Id, Vgs	14.3 mOhm
Supplier Device Package	PowerDI3333-8 (Type D)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

30V SYNCHRONOUS N-Channel Enhancement Mode MOSFET

Part	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Diodes Inc DMN3013LFG-13	8-PowerLDFN	1.2 V	30 V	MOSFET (Metal Oxide)	14.3 mOhm	9.5 A 15 A	600 pF	2.16 W	2 N-Channel (Dual)	PowerDI3333-8 (Type D)	-55 °C	150 °C	5.7 nC	Surface Mount
Diodes Inc DMN3013LDG-7	8-PowerLDFN	1.2 V	30 V	MOSFET (Metal Oxide)	14.3 mOhm	9.5 A 15 A	600 pF	2.16 W	2 N-Channel (Dual)	PowerDI3333-8 (Type D)	-55 °C	150 °C	5.7 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly