Specification	HAT2299WP-EL-E

Current - Continuous Drain (Id) (Ta)	14 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	710 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Package Name	8-WPAK (3)
Power Dissipation (Max)	25 W
Rds On (Max)	110 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

HAT2299 Series

Part	FET Type	Rds On (Max)	Vgs (Max)	Operating Temperature	Package Name	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Gate Charge (Max)	Mounting Type	Power Dissipation (Max)
Renesas Electronics Corporation HAT2299WP-EL-E	N-Channel	110 mOhm	30 V	150 °C	8-WPAK (3)	710 pF	150 V	14 A	10 V	MOSFET (Metal Oxide)	8-PowerWDFN	15 nC	Surface Mount	25 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources