
S26KS512SDPBHI020
ActiveFLASH MEMORY, PARALLEL NOR, 512 MBIT, 64M X 8BIT, CFI, PARALLEL, FBGA, 24 PINS
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S26KS512SDPBHI020
ActiveFLASH MEMORY, PARALLEL NOR, 512 MBIT, 64M X 8BIT, CFI, PARALLEL, FBGA, 24 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | S26KS512SDPBHI020 |
|---|---|
| Access Time | 96 ns |
| Clock Frequency | 166 MHz |
| Memory Format | FLASH |
| Memory Interface | HyperBus |
| Memory Organization | 64 M |
| Memory Size | 64 MB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24-VBGA |
| Supplier Device Package | 24-FBGA (6x8) |
| Technology | FLASH - NOR |
| Voltage - Supply [Max] | 1.95 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
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Description
General part information
S26KS512 Series
S26KS512SDPBHI020 is a Hyper Flash™ memory. It features a hyper bus low signal count DDR interface, that achieves high-speed read throughput. The DDR protocol transfers two data bytes per clock cycle on the data (DQ) signals. A read or write access for the Hyper Flash consists of a series of 16bit wide, one-clock cycle data transfers at the internal Hyper Flash core and two corresponding 8bit wide, one-half-clock-cycle data transfers on the DQ signals. Both data and command/address information are transferred in DDR fashion over the 8bit data bus. The clock input signals are used for signal capture by the Hyper Flash device when receiving command/address/data information on the DQ signals. The read data strobe (RWDS) is an output from the Hyper Flash device that indicates when data is being transferred from the memory to the host. RWDS is referenced to the rising and falling edges of CK during the data transfer portion of read operations.
Documents
Technical documentation and resources
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