STB13NM50N-1

Obsolete

STMicroelectronics

MOSFET N-CH 500V 12A I2PAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 500V 12A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB13NM50N-1

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STB13NM50N-1	150 °C	4 V	10 V	25 V	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	MOSFET (Metal Oxide)	30 nC	320 mOhm	500 V	960 pF	I2PAK	N-Channel	100 W	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 12A (Tc) 100W (Tc) Through Hole I2PAK

Technical documentation and resources