Specification	STB13NM50N-1

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	960 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	I2PAK
Power Dissipation (Max)	100 W
Rds On (Max)	320 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4 V

STB13N Series

Part	FET Type	Rds On (Max)	Operating Temperature	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Technology	Drain to Source Voltage (Vdss)	Package Name
STMicroelectronics STB13NM50N-1	N-Channel	320 mOhm	150 °C	30 nC	12 A	10 V	100 W	960 pF	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	25 V	4 V	MOSFET (Metal Oxide)	500 V	I2PAK

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