STL190N4F7AG

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STMicroelectronics

MOSFET N-CH 40V 120A POWERFLAT

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STMicroelectronics

MOSFET N-CH 40V 120A POWERFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	STL190N4F7AG

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Grade	Automotive
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	127 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Qualification	Grade	Power Dissipation (Max)	Technology	Vgs (Max)	FET Type
STMicroelectronics STL190N4F7AG	8-PowerVDFN	41 nC	120 A	Surface Mount Wettable Flank	2 mOhm	PowerFlat™ (5x6)	-55 °C	175 ░C	40 V	10 V	4 V	AEC-Q101	Automotive	127 W	MOSFET (Metal Oxide)	20 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 120A (Tc) 127W (Tc) Surface Mount, Wettable Flank PowerFlat™ (5x6)

Technical documentation and resources