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IRF6636TRPBF - IRF6614TR1PBF

IRF6636TRPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 4.5 MOHM;

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IRF6636TRPBF - IRF6614TR1PBF

IRF6636TRPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 4.5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6636TRPBF
Current - Continuous Drain (Id) @ 25°C81 A, 18 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2420 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric ST
Power Dissipation (Max)2.2 W, 42 W
Rds On (Max) @ Id, Vgs4.5 mOhm
Supplier Device PackageDIRECTFET™ ST
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRF6636 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources