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STL180N6F7

STL180N6F7

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STMicroelectronics

N-CHANNEL 60 V, 1.9 MOHM TYP., 120 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

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STL180N6F7

STL180N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 1.9 MOHM TYP., 120 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

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Description

General part information

STL180N6F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL180N6F7
Current - Continuous Drain (Id) (Ta)32 A
Current - Continuous Drain (Id) (Tc)120 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)79.5 nC
Input Capacitance (Ciss) (Max)4825 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package Length5 mm
Package NamePowerFlat™
Package Width6 mm
Power Dissipation (Max)4.8 W, 166 W
Rds On (Max)2.4 mOhm, 2.4 mOhm, 2.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part