AUIRFB8409

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Infineon Technologies

INFINEON’S AUIRFB8409 WITH ADVANCED PROCESS TECHNOLOGY, ULTRA-LOW ON-RESISTANCE, 175°C OPERATING TEMP, AND FAST SWITCHING. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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AUIRFB8409

Active

Infineon Technologies

INFINEON’S AUIRFB8409 WITH ADVANCED PROCESS TECHNOLOGY, ULTRA-LOW ON-RESISTANCE, 175°C OPERATING TEMP, AND FAST SWITCHING. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFB8409

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	450 nC
Input Capacitance (Ciss) (Max) @ Vds	14240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

AUIRFB8409 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)
Infineon Technologies AUIRFB8409	14240 pF	195 A	MOSFET (Metal Oxide)	TO-220-3	450 nC	TO-220AB	Through Hole	1.3 mOhm	10 V	-55 °C	175 ░C	375 W	N-Channel	3.9 V	40 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.70
		10	$ 6.72
		100	$ 5.41

Description

General part information

AUIRFB8409 Series

N-Channel 40 V 195A (Tc) 375W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources