JAN2N1016B

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Microsemi Corporation

TRANS NPN 100V 7.5A TO82

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Microsemi Corporation

TRANS NPN 100V 7.5A TO82

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N1016B

Current - Collector (Ic) (Max) [Max]	7.5 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Grade	Military
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Power - Max [Max]	150 W
Qualification	MIL-PRF-19500/102
Supplier Device Package	TO-82
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Grade	Qualification	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Microsemi Corporation JAN2N1016B	Military	MIL-PRF-19500/102	150 W	TO-82	2.5 V	NPN	20	100 V	1 mA	7.5 A	150 °C	-65 °C

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General part information

Bipolar (BJT) Transistor NPN 100 V 7.5 A 150 W TO-82

Technical documentation and resources

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