AOTF125A60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO220F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF125A60L

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	2993 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Supplier Device Package	Vgs (Max)
Alpha & Omega Semiconductor Inc. AOTF125A60L	125 mOhm	4.5 V	2993 pF	36 W	600 V	28 A	TO-220-3 Full Pack	10 V	39 nC	Through Hole	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	TO-220F	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 2.18

General part information

N-Channel 600 V 28A (Tj) 36W (Tc) Through Hole TO-220F

Technical documentation and resources