STL200N45LF7

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STMicroelectronics

MOSFET N-CH 45V 120A POWERFLAT

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STMicroelectronics

MOSFET N-CH 45V 120A POWERFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	STL200N45LF7

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	45 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.2 V

Part	Technology	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
STMicroelectronics STL200N45LF7	MOSFET (Metal Oxide)	45 V	8-PowerVDFN	120 A	PowerFlat™ (5x6)	150 W	N-Channel	1.8 mOhm	4.5 V 10 V	33 nC	1.2 V	20 V	-55 °C	175 ░C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 45 V 120A (Tc) 150W (Tc) Surface Mount PowerFlat™ (5x6)

Technical documentation and resources

No documents available