Specification	BAS516,H3F

Capacitance	0.35 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage	200 nA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Package / Case	SOD-523, SC-79
Package Name	ESC
Reverse Recovery Time (trr)	3 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	100 V
Voltage - Forward (Vf) (Max)	1.25 V

BAS516 Series

Diodes, 100 V/0.25 A Switching diode, SOD-523(ESC)

Part	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package Name	Technology	Voltage - DC Reverse (Vr) (Max)	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Capacitance
Toshiba Semiconductor and Storage BAS516,H3F	500 ns	200 mA	ESC	Standard	100 V	Surface Mount	SC-79 SOD-523	3 ns	200 nA	150 °C	1.25 V	250 mA	0.35 pF
Toshiba Semiconductor and Storage BAS516,L3F	500 ns	200 mA	ESC	Standard	100 V	Surface Mount	SC-79 SOD-523	3 ns	200 nA	150 °C	1.25 V	250 mA	0.35 pF

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