BAX12 TR

Obsolete

Central Semiconductor Corp

DIODE AVALANCHE 90V 400MA DO35

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Obsolete

Central Semiconductor Corp

DIODE AVALANCHE 90V 400MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAX12 TR

Capacitance @ Vr, F	35 pF
Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-35
Technology	Avalanche
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Capacitance @ Vr, F	Mounting Type	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
Central Semiconductor Corp BAX12 BK	35 pF	Through Hole	Avalanche	400 mA	100 nA	50 ns	1.25 V	200 mA 500 ns	Axial DO-204AH DO-35	200 C	-65 C	DO-35
Central Semiconductor Corp BAX12 TR	35 pF	Through Hole	Avalanche	400 mA	100 nA	50 ns	1.25 V	200 mA 500 ns	Axial DO-204AH DO-35	200 C	-65 C	DO-35

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 90 V 400mA Through Hole DO-35

Technical documentation and resources