
BC846UE6327
ActiveInfineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
Deep-Dive with AI
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BC846UE6327
ActiveInfineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BC846UE6327 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Frequency - Transition | 250 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 250 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | PG-SC74-6-1 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BC846 Series
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SC74-6-1
Documents
Technical documentation and resources
No documents available