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BC846UE6327 - ONSONSNUP4301MR6T1

BC846UE6327

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Infineon Technologies

BIPOLAR GEN PURPOSE TRANSISTOR

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BC846UE6327 - ONSONSNUP4301MR6T1

BC846UE6327

Active
Infineon Technologies

BIPOLAR GEN PURPOSE TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBC846UE6327
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition250 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]250 mW
QualificationAEC-Q101
Supplier Device PackagePG-SC74-6-1
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BC846 Series

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SC74-6-1

Documents

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