Technical Specifications
Parameters and characteristics for this part
| Specification | STB150NF55T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 190 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 6 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB150NF55 Series
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources
Datasheet
DatasheetUM1575
User ManualsAN4191
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
AN4390
Application NotesFlyers (5 of 6)
AN1703
Application NotesFlyers (5 of 6)
TN1224
Technical Notes & ArticlesTN1225
Technical Notes & ArticlesAN3267
Application NotesFlyers (5 of 6)
DS2909
Product SpecificationsFlyers (5 of 6)
