Specification	2SK3812(0)-ZP-E1-AY

Current - Continuous Drain (Id) (Tc)	110 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	250 nC
Input Capacitance (Ciss) (Max)	16800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263-3
Power Dissipation (Max)	213 W, 1.5 W
Rds On (Max)	2.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

2SK3812-ZP Series

Nch Power MOSFET 60V 110A 2.8mohm TO-263 / D2PAK

Part	Vgs (Max)	Package Name	Input Capacitance (Ciss) (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Package / Case	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Gate Charge (Max)	Technology	FET Type
Renesas Electronics Corporation 2SK3812-ZP-E1-AZ	20 V	TO-263-3	16800 pF	150 °C	60 V	2.5 V	110 A	1.5 W 213 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.8 mOhm	10 V	4.5 V	Surface Mount	250 nC	MOSFET (Metal Oxide)	N-Channel
Renesas Electronics Corporation 2SK3812(0)-ZP-E1-AY	20 V	TO-263-3	16800 pF	150 °C	60 V	2.5 V	110 A	1.5 W 213 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.8 mOhm	10 V	4.5 V	Surface Mount	250 nC	MOSFET (Metal Oxide)	N-Channel

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