ZVP3310A

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVP3310A

Current - Continuous Drain (Id) @ 25°C	140 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max) [Max]	625 mW
Rds On (Max) @ Id, Vgs [Max]	20 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

P-Channel Enhancement Mode Vertical DMOS FET

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)
Diodes Inc ZVP3310A	TO-92	50 pF	Through Hole	100 V	-55 °C	150 °C	140 mA	MOSFET (Metal Oxide)	P-Channel	TO-226-3 TO-92-3	20 Ohm	625 mW	10 V	3.5 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly