RD3H200SNFRATL
ActiveRohm Semiconductor
MOSFET, AEC-Q101, N-CH, 45V, TO-252-3 ROHS COMPLIANT: YES
RD3H200SNFRATL
ActiveRohm Semiconductor
MOSFET, AEC-Q101, N-CH, 45V, TO-252-3 ROHS COMPLIANT: YES
Description
General part information
RD3H200 Series
RD3H200SNFRA is the high reliability Automotive MOSFET, suitable for switching application.
Technical Specifications
Parameters and characteristics for this part
| Specification | RD3H200SNFRATL |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 20 A |
| Drain to Source Voltage (Vdss) | 45 V |
| Drive Voltage (Max Rds On) | 4 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 950 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 20 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 28 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Notes for Calculating Power Consumption:Static Operation
Package Dimensions
TO-252_TL Taping Information
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Reliability Test Result
How to Use LTspice® Models
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Judgment Criteria of Thermal Evaluation
PCB Layout Thermal Design Guide
RD3H200SNFRA Data Sheet
What Is Thermal Design
What is a Thermal Model? (Transistor)
Temperature derating method for Safe Operating Area (SOA)
List of Transistor Package Thermal Resistance
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
RD3H200SNFRA ESD Data
Notes for Temperature Measurement Using Thermocouples
Part Explanation
How to Use LTspice® Models: Tips for Improving Convergence
How to Create Symbols for PSpice Models
Method for Monitoring Switching Waveform
About Export Regulations
Moisture Sensitivity Level - Transistors
Impedance Characteristics of Bypass Capacitor
MOSFET Gate Resistor Setting for Motor Driving
Basics of Thermal Resistance and Heat Dissipation
Precautions When Measuring the Rear of the Package with a Thermocouple
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Explanation for Marking
Report of SVHC under REACH Regulation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Measurement Method and Usage of Thermal Resistance RthJC
About Flammability of Materials
Calculation of Power Dissipation in Switching Circuit
Anti-Whisker formation - Transistors
Inner Structure
Importance of Probe Calibration When Measuring Power: Deskew
Two-Resistor Model for Thermal Simulation
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Compliance of the RoHS directive
MOSFET Gate Drive Current Setting for Motor Driving
Types and Features of Transistors
Condition of Soldering / Land Pattern Reference
θ<sub>JA</sub> and Ψ<sub>JT</sub>