SN7002W E6433

Obsolete

Infineon Technologies

MOSFET N-CH 60V 230MA SOT323-3

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 230MA SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	SN7002W E6433

Current - Continuous Drain (Id) @ 25°C	230 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	PG-SOT323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Technology	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies SN7002W E6433	45 pF	4.5 V 10 V	500 mW	PG-SOT323	20 V	5 Ohm	230 mA	Surface Mount	N-Channel	MOSFET (Metal Oxide)	SC-70 SOT-323	1.8 V	60 V	-55 °C	150 °C	1.5 nC
Infineon Technologies SN7002W E6327	45 pF	4.5 V 10 V	500 mW	PG-SOT323	20 V	5 Ohm	230 mA	Surface Mount	N-Channel	MOSFET (Metal Oxide)	SC-70 SOT-323	1.8 V	60 V	-55 °C	150 °C	1.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 230mA (Ta) 500mW (Ta) Surface Mount PG-SOT323

Technical documentation and resources