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PD55008-E - Transistor RF FET N-CH 40V 4A 500MHz 3-Pin PowerSO-10RF Tube

PD55008-E

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STMicroelectronics

RF POWER TRANSISTOR, LDMOST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE, LATERAL MOSFETS

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PD55008-E - Transistor RF FET N-CH 40V 4A 500MHz 3-Pin PowerSO-10RF Tube

PD55008-E

Active
STMicroelectronics

RF POWER TRANSISTOR, LDMOST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE, LATERAL MOSFETS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPD55008-E
Current - Test150 mA
Current Rating (Amps)4 A
Frequency500 MHz
Gain17 dBi
Package / CasePowerSO-10 Exposed Bottom Pad
Power - Output8 W
Supplier Device Package10-PowerSO
Voltage - Rated40 V
Voltage - Test12.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 17.17
10$ 13.63
50$ 12.22
100$ 11.78
250$ 11.32
500$ 11.04

Description

General part information

PD55008-E Series

The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.

PD55008 boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008 superior linearity performance makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.