STP21NM50N

Obsolete

STMicroelectronics

MOSFET N-CH 500V 18A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 500V 18A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP21NM50N

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Supplier Device Package
STMicroelectronics STP21NM50N	10 V	TO-220-3	150 °C	500 V	140 W	N-Channel	4 V	18 A	65 nC	1950 pF	25 V	190 mOhm	Through Hole	MOSFET (Metal Oxide)	TO-220

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 18A (Tc) 140W (Tc) Through Hole TO-220

Technical documentation and resources