Specification	STP21NM50N

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	65 nC, 65 nC
Input Capacitance (Ciss) (Max)	1950 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	140 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4 V

STP21N Series

Part	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Package Name	Power Dissipation (Max)	FET Type	Mounting Type	Vgs(th) (Max)	Technology	Package / Case	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STP21NM50N	18 A	500 V	150 °C	190 mOhm	25 V	1950 pF	TO-220	140 W	N-Channel	Through Hole	4 V	MOSFET (Metal Oxide)	TO-220-3	65 nC 65 nC	10 V

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